About 2020 for Samsung 3 Nanometer MBCFET Chip on Roadmap | NextBigFuture.com

Date 16th, May 2019
Source NextBigFuture - Scientific News Websites

DESCRIPTION

Samsung’s 3nm Gate-All-Around (GAA) process, 3GAE, development is on track. The Process Design Kit (PDK) version 0.1 for 3GAE was released in April to help customers get an early start on the design work and enable improved design competitiveness along with reduced turnaround time (TAT).